page:p2 - p 1 plasti c - encapsulate diodes guangdong hottech industrial co,. ltd. switching diodes fe a tures low forward voltage : vf(3)=0.9v(typ.) fast reverse recovery time : trr=1.6ns(typ.) marking : b3 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol limi t s unit non - rep e tit i v e peak r e v e r s e v ol t age v rm 85 v dc blocking v ol t age v r 80 v fo r w a rd cont i nu o us curr e nt i fm 300 ma a v er age r ect i fied output current i o 100 ma p o w e r dissi p a tion p d 150 mw junction te m perature t j 125 s torage tem p er atu r e range t s t g - 55 - 1 25 electrical characteristics (tamb=25 unless otherwise specified) par a met e r s y mbol min. t y p. m ax . unit condi t ions r e v e r s e b r e a kd o w n v ol t age v (br)r 80 v i r = 100 a fo r w a rd v ol t age v f1 0.60 v i f = 1 ma v f2 0.72 v i f =10ma v f3 0.9 1.2 v i f =100ma r e v e r s e cur re nt i r1 0.1 ua v r =30v i r2 0.5 ua v r =80v ca p aci t a nce b e t w een termin a ls c t 0.9 3.0 pf v r =0,f=1mhz r e v e r s e r e co v er y ti m e t r r 1.6 4.0 ns i f =i r =10ma,i rr =0 . 1 i r 1. anode 2. anode sot - 23 3. cathode 1SS184
page:p2 - p 2 plasti c - encapsulate diodes guangdong hottech industrial co,. ltd. typical characteristics 1SS184
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